Dr. Kye Hyun Kyung

Dr. Kye Hyun Kyungis a highly accomplished figure in the technology and semiconductor industry, with a remarkable 30-year career at Samsung. As a semiconductor design expert, he played a crucial role in developing pioneering products, including the first-to-market Direct Rambus DRAM in 1997 and the industry-standard 3D V-NAND flash in 2013.

Heading Memory Solution Product & Development, Dr. Kyung led the innovation of cutting-edge memory technologies at Samsung, contributing to the creation of products like Universal Flash Storage (UFS) 3.0 and Solid State Drive (SSD) with 128-layer V-NAND chips in 2019.

His leadership extends to being the former president and CEO of Samsung Electro-Mechanics, where he achieved record revenue and earnings through the convergence of material and component technologies. Dr. Kyung is recognized for his technological prowess, evident in prestigious awards such as the IR52Jang Young-Shil Award from South Korea’s Ministry of Science and ICT.

An alumnus of Seoul National University, Dr. Kye Hyun Kyung holds B.S., M.S., and Ph.D. degrees in control and instrumentation engineering. He is a distinguished recipient of the alumni award from the College of Engineering at SNU. Dr. Kyung's multifaceted contributions and leadership position him as a key influencer insemiconductor design and technological advancement.

Dr. Kye Hyun Kyung

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